Transistor Enhancement To220 Sfg110n12PF Vds-120V ID-330A RDS (ON) -6.5milliohm Qg-68.9nc for Battery Protection Solar Inverter N-Channel Power Mosfet

Transistor Enhancement To220 Sfg110n12PF Vds-120V ID-330A RDS (ON) -6.5milliohm Qg-68.9nc for Battery Protection Solar Inverter N-Channel Power Mosfet. High Current Capacity: Supports continuous drain current of 110 A and pulsed current up to 330 A. Fast Switching Speed: Features turn-on delay of 30.3 ns and rise time of 33 ns for high efficiency. High Voltage Rating: Drain-source voltage rating of 120 V suitable for demanding applications. RoHS and ISO Certified: Complies with RoHS and ISO standards for environmental and quality safety. Optimized for High Vth: Specially designed for systems with gate driving voltage greater than 10V. Excellent Avalanche Characteristics: Delivers superior stability and uniformity with 400 mJ single pulsed avalanche energy.