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To247 Ost90n60hczf Vces-600V Maximum Junction Temperature175 Pulse-270A N-Channel Power IGBT. Patented TGBT Technology: Uses advanced Trident-Gate Bipolar Transistor technology for low VCE(sat) and gate charge. High Power Capability: Supports 600V VCES and 270A pulsed collector current for high power applications. Excellent Switching Performance: Features fast and soft antiparallel diode with excellent stability and uniformity. RoHS and ISO Certified: Compliant with RoHS and ISO standards, ensuring quality and environmental safety. Suitable for High Frequency: Designed for mid to high range switching frequency converters and induction converters.