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1mm² To39 240nm~280nm GaN-Based UV Pd Photodiode, High Responsivity, Low Dark Current for Instrumentation, Laser Warning & Industrial Applications
4.0InStock Source-listed auditby Raydetect Optoelectronics (Chongqing) Co., Ltd.
Description
1mm² To39 240nm~280nm GaN-Based UV Pd Photodiode, High Responsivity, Low Dark Current for Instrumentation, Laser Warning & Industrial Applications, Find Details and Price about UV Photodiode GaN Photodiode from 1mm² To39 240nm~280nm GaN-Based UV Pd Photodiode, High Responsivity, Low Dark Current for Instrumentation, Laser Warning & Industrial Applications - Raydetect Optoelectronics (Chongqing) Co., Ltd.
Specifications
OriginChina
FeatureSemiConductor, Semiconductor
HS Code8541490000
MaterialMetal, Metal
Chip TypePin Junction
IP RatingIP67, IP67
Trademarkraydetect
CustomizedCustomized, Customized
Package Size18.00cm * 10.00cm * 5.00cm
CertificationRoHS, RoHS
Specification1mm²
Responsibility0.134A/W
