Transistor Enhancement To252 Osg80r1K4df Vds-850V ID-12A RDS (ON) -1.4ohm Qg-7.5nc for LED Lighting PC Power Telecom Power N-Channel Power Mosfet

Transistor Enhancement To252 Osg80r1K4df Vds-850V ID-12A RDS (ON) -1.4ohm Qg-7.5nc for LED Lighting PC Power Telecom Power N-Channel Power Mosfet. High Voltage MOSFET: 850V VDS and 12A pulse current for robust high power applications. Low On-Resistance: 1.4 ohm RDS(ON) minimizes conduction loss for superior efficiency. Fast Switching Performance: 7.5nC gate charge and optimized design reduce switching loss significantly. Robust Avalanche Capability: 100mJ single pulsed avalanche energy ensures durability under stress. RoHS and ISO Certified: Compliant with RoHS, ISO, and Halogen Free standards for safety. TO252 Package Options: Available in TO252-J and TO252-P packages with 2500 units per reel. High Power Density: Tailored for LED lighting, PC power, and EV chargers with high efficiency.