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7A 650V N-Channel Enhancement Mode Power MOSFET D7N65 TO-252. High Voltage Rating: Maximum Drain-Source DC Voltage up to 650V for robust power switching. Fast Switching Speed: Designed for system miniaturization with high efficiency in power circuits. Low ON Resistance: Rdson is less than or equal to 1.45 Ohms for reduced power loss. ESD Improved Capability: Enhanced electrostatic discharge protection for reliable operation. Low Gate Charge: Typical gate charge of 24nC ensures efficient driving. Comprehensive Testing: 100% Single Pulse Avalanche Energy and Delta VDS tested.