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7A 600V N-Channel Enhancement Mode Power MOSFET D7N60 TO-252. High Voltage Rating: Maximum Drain-Source DC Voltage up to 600V for robust power switching. Fast Switching Speed: Optimized for system miniaturization and higher efficiency in power circuits. ESD Improved Capability: Enhanced electrostatic discharge protection for reliable performance. Low Gate Charge: Typical gate charge of 24nC reduces drive power requirements. OEM and ODM Services: Customization available with 35 R&D engineers and full manufacturing support.