High Temperature Bridgman Furnace 1200℃ for Semiconductor Material Growth

High Temperature Bridgman Furnace 1200℃ for Semiconductor Material Growth. Customizable Lifting Stroke: Lifting stroke can be customized according to specific customer requirements. Versatile Crystal Growth: Supports crystal growth in air, vacuum, or protective atmosphere environments. Safe Motor-Driven Lifting: Motor-driven furnace body with limit switches prevents overshoot during movement. Multi-Function Design: Functions as a crystal growth furnace, rapid cooling/heating tube furnace, and vertical tube furnace. Durable Double-Layer Shell: Features a double-layer shell with a 4mm air gap for effective heat insulation. Water-Cooled Flanges: Upper and lower flanges are water-cooled, equipped with gas ports and vacuum connections. High-Quality Lining: Monolithic furnace lining made from 1600-type Alumina Polycrystalline Fiber with >95% alumina content.