4A 600V N-Channel Enhancement Mode Power MOSFET D4N60 TO-252

4A 600V N-Channel Enhancement Mode Power MOSFET D4N60 TO-252. High Voltage Rating: Drain-Source Voltage up to 600V for robust power switching. Fast Switching Capability: Optimized for system miniaturization and higher efficiency. Low ON Resistance: Rdson less than or equal to 2.5 ohms for reduced power loss. ESD Improved Capability: Enhanced electrostatic discharge protection for reliability. Low Gate Charge: Typical value of 14.5nC for efficient drive requirements. High Current Handling: Continuous drain current of 4A at 25C and 16A pulsed. Wide Operating Temperature: Junction temperature range from -55C to 150C. OEM and ODM Services: Customization services available for specific brand needs.