2A 650V N-Channel Enhancement Mode Power MOSFET B2N65 TO-251

2A 650V N-Channel Enhancement Mode Power MOSFET B2N65 TO-251. High Voltage Rating: Drain-Source Voltage up to 650V for robust power switching applications. Fast Switching Speed: Optimized for system miniaturization and higher efficiency in power circuits. Low ON Resistance: Rdson less than or equal to 5 Ohms for reduced power loss. Low Gate Charge: Typical gate charge of 9nC ensures efficient drive requirements. Avalanche Energy Tested: 100% single pulse avalanche energy and delta VDS tested for reliability. Wide Operating Temperature: Junction temperature range from -55 to 150 degrees Celsius. OEM and ODM Services: Customization services available with 35 dedicated R&D engineers. RoHS Compliant: All products are Pb-free and meet RoHS and Reach standards.