
Pdfn5*6 Sfs06r013ugf Vds-60V ID-520A RDS (ON) -1.6milliohm Qg-83.6nc Transistor Mode N-Channel Power Mosfet. Low RDS(ON) & FOM: Extremely low on-state resistance and figure of merit for high efficiency. Fast Switching Speed: Optimized for fast switching with low switching loss and soft recovery. High Current Capability: Pulsed drain current up to 520 A with continuous current of 130 A. Low Gate Charge: Total gate charge of 83.6 nC ensures low driving power requirements. Excellent Reliability: Features uniformity and excellent avalanche characteristics for durability. Wide Operating Temperature: Operates and stores safely within -55 to 150 degrees Celsius range. RoHS & ISO Certified: Meets international environmental and quality standards for safety. Low Vth Optimization: Specially optimized for synchronous rectification with low driving voltage.