To247 Ost50n65hf Vces-650V Maximum Junction Temperature175, Pulse-200A Vce (sat) -1.4V Qg-99nc N-Channel Power IGBT

Name: To247 Ost50n65hf Vces-650V Maximum Junction Temperature175, Pulse-200A Vce (sat) -1.4V Qg-99nc N-Channel Power IGBT
Brand: Shanghai Winture Electric Co., Ltd.
SKU: QZBGSlevnKpE
Price: 8 INR

4.0InStock Source-listed auditby Shanghai Winture Electric Co., Ltd.

₹8≈ $0.1 · indicative, confirm with supplier

Description

To247 Ost50n65hf Vces-650V Maximum Junction Temperature175, Pulse-200A Vce (sat) -1.4V Qg-99nc N-Channel Power IGBT. Advanced TGBTTM Technology: Patented Trident-Gate Bipolar Transistor technology for superior performance. Low VCE(sat) and Gate Charge: Provides extremely low saturation voltage and gate charge for efficiency. High Power Switching Capability: Suitable for mid to high range switching frequency converters. Excellent Stability and Uniformity: Ensures consistent conduction and switching loss performance. Comprehensive Certifications: Certified with RoHS, CE, ISO, and CCC standards.