4A 600V N-Channel Enhancement Mode Power MOSFET B4N60 TO-251

4A 600V N-Channel Enhancement Mode Power MOSFET B4N60 TO-251. High Voltage Rating: Supports 600V Drain-Source Voltage for robust power switching applications. Fast Switching Speed: Features low gate charge (14.5nC) and low reverse transfer capacitance (4pF). Low On-Resistance: Drain-Source On-Resistance is less than or equal to 2.5 Ohms for efficiency. Wide Operating Temperature: Junction and storage temperature range from -55 to 150 degrees Celsius. Avalanche Energy Tested: 100% single pulse avalanche energy tested for enhanced reliability. ESD Improved Capability: Enhanced electrostatic discharge protection for better circuit stability. Multiple Package Options: Available in TO-220, TO-251, TO-252, TO-262, and TO-263 packages. RoHS Compliant: Products are Pb-free and meet RoHS and Reach environmental standards.