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2A 650V N-Channel Enhancement Mode Power MOSFET D2N65 TO-252. High Voltage Rating: Drain-Source Voltage up to 650V for robust power switching applications. Fast Switching Capability: Designed for system miniaturization with fast switching speeds and low ON resistance. Low Gate Charge: Typical gate charge of 9nC ensures efficient operation and reduced power loss. Avalanche Energy Tested: 100% tested for single pulse avalanche energy and delta VDS stability. OEM/ODM Services: Customization services available with 35 R&D engineers supporting development. RoHS Compliant: All products meet RoHS and Reach standards for environmental safety.